Renesas Electronics Corporation today announced its successful development of the world’s first split-gate metal-oxide nitride oxide silicon (SG-MONOS) flash memory cells employing transistors with fin-shape for use in microcontrollers (MCUs) with on-chip flash memory having a circuit linewidth of 16 to 14 nanometer (nm) or finer...

Renesas Electronics Corporation today announced its successful development of the world’s first split-gate metal-oxide nitride oxide silicon (SG-MONOS) flash memory cells employing transistors with fin-shape for use in microcontrollers (MCUs) with on-chip flash memory having a circuit linewidth of 16 to 14 nanometer (nm) or finer...

At IEEE IEDM conference, imec reported for the first time the CMOS integration of vertically stacked gate-all-around (GAA) silicon nanowire MOSFETs. Key in the integration scheme is a dual-work-function metal gate enabling matched threshold voltages for the n- and p-type devices...

At IEEE IEDM conference, imec reported for the first time the CMOS integration of vertically stacked gate-all-around (GAA) silicon nanowire MOSFETs. Key in the integration scheme is a dual-work-function metal gate enabling matched threshold voltages for the n- and p-type devices...

Toshiba Corporation’s Storage & Electronic Devices Solutions Company today announced the launch of a 1.3A output current CMOS LDO regulator, TCR13AGADJ, for use in the power supplies of mobile devices, housed in the industry’s leading-class small package...

Toshiba Corporation’s Storage & Electronic Devices Solutions Company today announced the launch of a 1.3A output current CMOS LDO regulator, TCR13AGADJ, for use in the power supplies of mobile devices, housed in the industry’s leading-class small package...

In nanotechnology control is key. Control over the arrangements and distances between nanoparticles can allow tailored interaction strengths so that properties can be harnessed in devices such as plasmonic sensors. Now resear...