Taipei, Monday, Jun 26, 2017, 16:48

More ICs Solutions

UMC Holds Grand Opening Ceremony for New 12-Inch Wafer Fab in China (2016.11.16)

United Microelectronics Corporation (UMC) today celebrated the grand opening of United Semi, UMC’s 12-inch joint venture wafer fab in Xiamen China. The fab was completed in record time, realized volume production for customer products merely 20 months after groundbreaking in March of 2015...

eMemory’s NeoFuse IP Verified in TSMC 10nm FinFET Process (2016.11.16)

HSINCHU, Taiwan – eMemory today announced the successful demonstration of its security-enhanced NeoFuse IP in TSMC’s 10nm FinFET process, along with IP design kits available to customers for product design-in. Security concerns associated with high-level chips heighten the need for security functions in logic NVM IP with leading-edge process nodes...

TSMC to Publish 7nm FinFET Technology at ISSCC 2017 (2016.11.15)

TAIPEI, Taiwan – The International Solid-State Circuits Conference (ISSCC) 2017 is going to be held on February 5, 2017 to February 9 in San Francisco, United States. And there will be 15 papers to be published from Taiwan, including TSMC’s 7-nanometer Fin Field-Effect Transistor (FinFET) technology which will be the industry’s first to announce at ISSCC 2017...

Modulated Doping Improves GaN-based Vertical-cavity Surface-emitting Lasers (2016.11.14)

Researchers at Meijo University and Nagoya University in Japan demonstrate a design of GaN-based vertical-cavity surface-emitting lasers (VCSELs) that provides good electrical conductivity and is readily grown. The findings are reported in Applied Physics Express...

Xilinx Unveils Details for New 16nm Virtex UltraScale+ FPGAs (2016.11.09)

Xilinx today unveiled details for new 16nm Virtex UltraScale+ FPGAs with HBM and CCIX technology. Containing the highest memory bandwidth available, these HBM-enabled FPGAs offer 20X higher memory bandwidth relative to a DDR4 DIMM and 4X less power per bit versus competing memory technologies...

Toshiba to Expand 3D Flash Memory Production Capacity (2016.11.08)

Toshiba Corporation today announced the outline schedule for the construction of a state-of-the-art fabrication facility at Yokkaichi Operations in Mie, Japan, for expanded production of BiCS FLASH, its proprietary 3D Flash memory...

Panasonic to Start Mass Production of High-speed Gate Driver Dedicated to GaN Power Transistor X-GaN (2016.11.07)

Panasonic Corporation today announced that it will start mass production of a high-speed gate driver (AN34092B) optimized for driving its GaN power transistor X-GaN in November 2016. The company will also start mass production of two types of X-GaN (PGA26E07BA and PGA26E19BA) and provide solutions in combination with high-speed gate drivers...

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