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More ICs Solutions

Toshiba Expands Line-up of Embedded NAND Flash Memory Products for Automotive Applications (2016.12.20)

Toshiba Corporation’s Storage & Electronic Devices Solutions Company announced the launch of JEDEC e∙MMC Version 5.1 compliant embedded NAND flash memory products supporting AEC-Q100 Grade2 requirements. The line-up offers densities of 8GB, 16GB, 32GB and 64GB...

China’s National IC Fund to Focus on Fabless IC Design (2016.12.19)

China’s National Integrated Circuitry Investment Fund (here referred to as “National IC Fund”) has committed to invest nearly RMB 70 billion into the domestic semiconductor sector since its creation in 2015. Approximately 60% of the committed investment amount has been allocated to building semiconductor wafer fabs, according to TrendForce’s analysis...

Only DRAM Suppliers and Top Foundries Use 300mm Wafers (2016.12.19)

According to IC Insights’ latest report, number of IC manufacturers using 300mm wafers less than half using 200mm wafers, and is becoming top-heavy. IC Insights said, prior to 2008, the 200mm wafer was used in more cases for manufacturing ICs than any other wafer size...

New iCE40 UltraPlus Accelerate Innovation in Smartphones and IoT Devices (2016.12.13)

Lattice Semiconductor Corporation announced its new iCE40 UltraPlus FPGA devices, one of the industry’s most energy-efficient & programmable mobile heterogeneous computing (MHC) solutions. This latest addition to the iCE40 Ultra family delivers eight times more memory (1...

Shortage of NAND Flash to Cause Prices of SSDs and EMMCs to Rise by Over 10% in Q1 2017 (2016.12.12)

DRAMeXchange, a division of TrendForce, reports that the global shortage of NAND Flash has reached its most severe phase for 2016 in this fourth quarter. Factors that aggravate the shortage include strong smartphone shipments, growing SSD demand and the increase in the average memory density of eMMCs and eMCPs...

Renesas Announces World’s First Fin-Shaped MONOS Flash Memory Cells for MCUs in 16/14nm (2016.12.07)

Renesas Electronics Corporation today announced its successful development of the world’s first split-gate metal-oxide nitride oxide silicon (SG-MONOS) flash memory cells employing transistors with fin-shape for use in microcontrollers (MCUs) with on-chip flash memory having a circuit linewidth of 16 to 14 nanometer (nm) or finer...

Imec Demonstrates World’s First Vertically Stacked Gate-all-Around Si Nanowire CMOS Transistors (2016.12.07)

At IEEE IEDM conference, imec reported for the first time the CMOS integration of vertically stacked gate-all-around (GAA) silicon nanowire MOSFETs. Key in the integration scheme is a dual-work-function metal gate enabling matched threshold voltages for the n- and p-type devices...

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